谢亚宏教授报告
时间：7月28日上午10:00
地点：曲江校区西六楼409会议室
On the Materials Physics Governing Epitaxial Crystal Growths
Professor Ya-Hong Xie
Department of Materials Science & Engineering, The University of California Los Angeles; yhx@ucla.edu
Epitaxial growth of thin films has been an integral part the microelectronics industry and a rich field of materials science. At the core of epitaxy is the intricate interplay between thermodynamics and kinetics of the atoms on surfaces.
In this talk, I will share with you my personal view of the complex relation of energetic versus kinetics through an array of examples. The discussion of the specific examples follows the order of increasing complexity and includes:
1. homo-epitaxy of Si on Si including doping;
2. lattice mismatched hetero-epitaxy of SiGe on Si;
3. polar-nonpolar hetero-epitaxy of InAs on Si;
4. hetero-epitaxy with extra large lattice mismatch as in GaN on Silicon;
5. the growths of 3-dimensional crystals on 2-dimensional van der Waals materials (graphene on graphene; GaN on graphene);
The discussions will highlight the importance of a clear sense of energetic and kinetics when dealing with each of these topics. Experimental as well as theoretical studies from our group at UCLA as well as from other groups from all around the world will be described when appropriate.
谢亚宏教授简介
谢亚宏教授是国际半导体薄膜材料领域的知名专家，谢教授于1981年获得美国普渡大学物理学学士学位，1983年和1986年分别获得加州大学洛杉矶分校电子工程的硕士、博士学位，1986-1999年在贝尔实验室担任研究员，1999年至今为加州大学洛杉矶分校终身教授并担任西安交通大学苏州纳米科学与工程技术学院特聘教授，以及北京大学、南京大学、浙江大学、台湾成功大学的客座教授。他是美国物理学会、材料学会、IEEE的会士，2010年起在德国莱布尼兹微电子所做访问科学家，于2012年获得亚历山大凡洪堡研究大奖，于2015年入选浙江省千人计划。
谢教授在硅基半导体材料、器件等多个领域都有卓越的建树。在贝尔实验室工作的14年里，他在以下几个科研领域做出了重要的贡献：掺杂中心产生的光致发光，VCSEL, 多孔硅薄膜发光，锗硅材料分子束外延生长，锗硅异质结中位错动力学，自组装锗硅量子点，锗硅机构中高载流子迁移率二维电子气，等等。谢教授当前的研究方向是石墨烯的外延生长及应用，氮化镓的选择性外延生长，和新型纳米器件。
FIGURE. ab initio calculation of minimum energy configurations of the various clusters consisting different numbers of carbon atoms over graphene surface.
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